CSHD6-100C TR13 PBFREE 数据手册
CSHD6-100C
SURFACE MOUNT SILICON
DUAL, COMMON CATHODE
HIGH VOLTAGE
SCHOTTKY RECTIFIER
6.0 AMP, 100 VOLT
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CSHD6-100C is a
silicon Schottky rectifier designed for high voltage
applications requiring a low forward voltage drop.
MARKING: FULL PART NUMBER
DPAK CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
Average Rectified Forward Current (TC=120°C)
IO
Peak Forward Surge Current, tp=10ms
Peak Repetitive Reverse Surge Current, tp=2.0μs
Critical Rate of Rise of Reverse Voltage
Operating and Storage Junction Temperature
Thermal Resistance
IFSM
IRRM
dv/dt
TJ, Tstg
ΘJC
100
UNITS
V
6.0
A
50
A
1.0
A
10,000
V/μs
-65 to +150
°C
3.5
°C/W
ELECTRICAL
SYMBOL
IR
IR
CHARACTERISTICS PER DIODE: (TC=25°C unless otherwise noted)
TEST CONDITIONS
TYP
MAX
VR=100V
0.34
30
VR=100V, TC=125°C
0.39
10
VF
IF=3.0A
0.73
0.75
VF
IF=3.0A, TC=125°C
IF=6.0A
0.63
0.70
V
0.82
1.10
V
0.72
1.05
VF
VF
CJ
IF=6.0A, TC=125°C
VR=0, f=1.0MHz
321
UNITS
μA
mA
V
V
pF
R7 (1-March 2016)
CSHD6-100C
SURFACE MOUNT SILICON
DUAL, COMMON CATHODE
HIGH VOLTAGE
SCHOTTKY RECTIFIER
6.0 AMP, 100 VOLT
DPAK CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Anode 1
2) Cathode
3) Anode 2
4) Cathode
Pin 2 is common to the tab (4)
MARKING: FULL PART NUMBER
R7 (1-March 2016)
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CSHD6-100C
SURFACE MOUNT SILICON
DUAL, COMMON CATHODE
HIGH VOLTAGE
SCHOTTKY RECTIFIER
6.0 AMP, 100 VOLT
TYPICAL ELECTRICAL CHARACTERISTICS
R7 (1-March 2016)
w w w. c e n t r a l s e m i . c o m
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REQUESTING PRODUCT PLATING
1. If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
2. If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
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